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Analog BiCMOS Design: Practices and Pitfalls

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This book presents practical methods and pitfalls encountered in the design of biCMOS integrated circuits. It is intended as a reference for design engineers and as a text for an introductory course on analog integrated circuit design for engineering seniors and graduate students. Abroad range of topics are covered with the intent of giving new designers the tools to complete a design project. Most of the topics have been simplified so they can be understood by students who have had a course in electronics.

The material has been used in a course open to seniors and graduate students at the University of Rhode Island. In the course, students were required to design an analog integrated circuit that was fabricated by Cherry Semiconductor Corporation.

In the process of assembling material for the book, we had discussions with many people who have been generous with information, ideas and criticism. We are grateful to James Alvernez, Mark Belch, Brad Benson, Mark Crowther, Vincenzo DiTommaso, Jeff Dumas, Paul Ferrara, Godi Fischer, Justin Fisher, Robert Fugere, Brian Harnedy, David Harrington, Ashish Kirtania, Seok-Bum Ko, Shawn LaLiberte, Andreas Ladas, Sangmok Lee, Eric Lindberg, Jien-Chung Lo, Robert Maigret, Nadia Matchey, Andrew McKinnon, Jay Moser, Ted Neira, Peter Rathfelder, Shelby Raymond, Jon Rhan, Paul Sisson, Michael Tedeschi, Claudio Tuozzolo, and Yingping Zheng.

Finally, we owe our thanks to the management and engineering staff of Cherry Semiconductor Corporation. CSC has fabricated scores of analog IC designs generated by the URI students enrolled in the course that has been the basis for this book.
James C. Daly
Denis P. Galipeau

The properties and performance of analog biCMOS integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of silicon devices. It begins with a discussion of conductivity and resistance. Simple physical models for bipolar transistors, MOS transistors, and junction and diffusion capacitance are developed.
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