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 Fabrication of SiGe HBT BiCMOS Technology
While the idea of cleverly using silicon–germanium (SiGe) and silicon (Si) strained-layer epitaxy to
practice bandgap engineering of semiconductor devices in the highly manufacturable Si material system
is an old one, only in the past decade has this concept become a practical reality. The final success of
creating novel Si... |  |  |  |  |
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