Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices.
Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today’s SiC technology and shows you how SiC can be adopted in developing tomorrow’s applications.
We hope that all who read this book will benefit from the somewhat different approach we have taken. We begin with an overview of SiC as of 2003, with an attempt to provide some predictions as to the market for the technology. We then immediately jump into the application chapters, first on gas sensors, which is clearly an area where SiC can gain a significant market share compared with traditional Si technology, followed by advances in electric motor drive where, again, SiC clearly has an advantage over Si due to its robust material properties. We then step back and discuss the all-important area of SiC ion implantation technology—this is key since the properties of the SiC lattice precludes the use of thermal diffusion to achieve planar selective doping over the surface of single-crystal wafers. After discussing this topic, we then finish up with a discussion of recent advances in both SiC MOS and bipolar technology, both of which directly impact the sensor and motor drive applications. Attention was made to provide a large number references in the recognition that no single book can be fully exhaustive of such a broad subject such as SiC.
About the Author
Stephen E. Saddow is an associate professor electrical engineering at the University of South Florida, Tampa, Florida. He earned a Ph.D. in electrical engineering at the University of Maryland, College Park and an M.S. in electrical engineering at Polytechnic University.
Anant K. Agarwal is a Senior Scientist at Cree Inc., Durham, North Carolina, managing the development of SiC power devices. He received a Ph.D. degree in Electrical Engineering, in 1984, from the Lehigh University, Bethlehem, Pa and an M.S. in Electrical Engineering, in 1980, from the University of Tennessee.
