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Within the last 15 years in the field of “sputtering by particle bombardment”
several new and important results have been published in internal reports,
in PhD thesis, as well as in the open literature. This relates especially to
a more detailed understanding of the sputtering process by computational
means such as molecular dynamics and binary collision approximation (BCA)
programs. BCA programs allow confirmation of a large amount of measured
data and predictions of sputtering yields and distributions. Progress has been
achieved in chemical effects in sputtering, in sputtering by very high energy
ions, in electronic sputtering, and in applications of sputtering for surface
layer analysis and modifications of surfaces, such as machining, polishing
and creation of surface structures such as dots and ripples. In this volume
it is intended to summarise the new results by the experts in the fields. We
hope that this will be of help for all colleagues who are working or plan to
work in this interesting and important field of science and technology.
We like to thank especially our colleagues who accepted to contribute
to this book by their experience in the different fields, Max-Plank-Institut
f¨ur Plasmaphysik for the possibilities of using the Computer Centre and
Springer Verlag for the good collaboration. Special thanks are given to our
colleagues K. Ertl and U. von Toussaint for their help and B. Rauschenbach
and S. Facsko for valuable information about nanostructuring of surfaces by
ion bombardment.
This volume gives a comprehensive overview about the physical processes causing sputtering of solids at bombardment with energetic ions. The most important quantities are the sputtering yields, i.e. the average number of atoms eroded per incident ion. The latest results for the sputtering yields and their dependence on the incident energy and angle of incidence, as well as the energy and angular distributions of the sputtered atoms are presented. This concerns experimentally determined yields as well as a critical evaluation of the computational methods used to calculate the yields and distributions. The energies of the incident ions cover the range between a few eV up to several MeV. The influence of chemical effects between the incident ions and the atoms of the bombarded solid on the sputtering yields are also reviewed. |
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