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 Electro-Optics Handbook
It’s often difficult to predict which areas of a field will become rejuvenated and grow rapidly or spin off to fit with another to form something new. The field of electro-optics is also unpredictable, but currently it has numerous forces acting on it. First is the development of new optical sources such as ultrafast lasers and fiber... |  |  ESD Basics: From Semiconductor Manufacturing to Product Use
Electrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as... |  |  Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and PracticeThe focused ion beam (FIB) instrument has experienced an intensive period of maturation since its inception. Numerous new techniques and applications have been brought to fruition by the tireless efforts of some very innovative scientists with the foresight to recognize the potential of this upstart apparatus. Over the past few years, the FIB has... |
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 Non-Equilibrium Dynamics of Semiconductors and NanostructuresThis book consists of recent new developments in the field of ultrafast dynamics in semiconductors and nanostructures. It consists of eight chapters. Chapter 1 reviews spin dynamics in a high-mobility, two-dimensional electron gas. Chapter 2 deals with generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons... |  |  |  |  Properties of Semiconductor Alloys: Group-IV, III-V and II-VI SemiconductorsThe main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport... |
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 Transmission Electron Microscopy and Diffractometry of Materials
Experimental methods for diffraction and microscopy are pushing the front
edge of nanoscience and materials science, and important new developments
are covered in this third edition. For transmission electron microscopy, a remarkable
recent development has been a practical corrector for the spherical
aberration of the objective... |  |  |  |  SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure DevicesWhat seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite... |
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