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 |  |  |  |  Fabrication of SiGe HBT BiCMOS Technology
While the idea of cleverly using silicon–germanium (SiGe) and silicon (Si) strained-layer epitaxy to
practice bandgap engineering of semiconductor devices in the highly manufacturable Si material system
is an old one, only in the past decade has this concept become a practical reality. The final success of
creating novel Si... |
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 Fowler-Nordheim Field Emission: Effects in Semiconductor Nanostructures (Springer Series in Solid-State Sciences, Vol. 170)
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe... |  |  Electronics: A Systems Approach (3rd Edition)
Electronics represents one of the most important, and rapidly changing, areas of engineering. It is used at the heart of a vast range of products that extends from mobile phones to computers, and from cars to nuclear power stations. For this reason, all engineers, scientists and technologists need a basic understanding of such systems, while... |  |  Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to... |
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